采用光激励与电激励的方式对AlGaInP与InGaN/GaN基LED的电学特性进行了表征, 并重点比较分析了两种激励方式的下理想因子这一重要参数的差异。探讨了影响LED理想因子的因素, 确定理想因子的适宜注入强度范围。研究结果表明: 结温与注入强度是影响LED理想因子的重要因素; 对于特定类型的发光二极管, 空间电荷区起主导作用时对应的注入强度范围内能够获得反映器件性能的LED理想因子。LED的理想因子与光激励或者电激励方式无关, 因而光激励能够代替电激励对LED电学特性及理想因子进行非接触检测。

The electrical characteristic of AlGaInP and InGaN/GaN-based LEDs were measured and explored under optical and electrical excitation. One of the significant parameter of LED characteristic, n, was mainly taken into consideration under the two varied excitation styles. The results showed that both junction temperature and injecting intensity of carrier influenced n. The essential performance of devices was gained within injecting intensity range where the action of space-charge region plays the most important role on current transferring. We found n, obtained in different motivation conditions, is independent on the excitation ways. Therefore, optical excitation can be applied to take place of electrical excitation for the non-contact detection of n in LEDs.