采用射频磁控溅射法在n-Si(100)衬底上沉积Si1-xGex薄膜，俄歇电子谱(AES)测定Si1-xGex薄膜的Ge含量约为17%。对薄膜进行高温磷扩散掺杂，制得n-poly-Si0.83Ge0.17。在n-poly-Si0.83Ge0.17薄膜上溅射一层Co膜，制成Co/n-poly-Si0.83Ge0.17/n-Si肖特基结样品。在300～600 ℃范围内，对样品做快热退火。对不同退火温度下的样品做I-V-T测试。研究发现，测试温度升高，不同退火温度样品的肖特基势垒高度(SBH)的差别变小，500 ℃退火的样品，表观SBH最小。总体上，SBH随测试温度的升高而变大，理想因子的变化趋势则与之相反。基于SBH的不均匀分布建模，对实验结果给出了较为合理的解释。

On n-Si(100) substrates, the Si1-xGex films were deposited by RF magnetron sputtering technique. AES spectra determine that Ge content in the Si1-xGex film is 17% approxi-mately. The Si0.83Ge0.17 films were doped with phosphorus at high temperature through thermal diffusion to fabricate n-type polycrystalline films, that is, the n-poly-Si0.83Ge0.17. And a Co film was sputtered on it. Thus, the Co/n-poly-Si0.83Ge0.17/n-Si Schottky junctions were made. Rapid thermal annealing (RTA) was conducted on these junctions from 300 ℃ to 600 ℃. The variable temperature I-V testing has been performed on the annealed Co/n-poly-Si0.83Ge0.17 Schottky junctions. It is found that, with the test temperature increase, the Schottky barrier height (SBH) difference of samples annealed at different RTA temperatures becomes less. And the sample annealed at 500 ℃ has the least apparent SBH. As a whole, the SBHs increase and the apparent ideality factors decrease with the test temperature increasing. Based on the model of inhomogeneous distribution of SBH, a reasonable explanation has been fulfilled on the experimental data.