红外技术, 2011, 33 (10): 598, 网络出版: 2011-11-11
Ge(211）衬底上分子束外延 CdTe薄膜
Heteroepitaxy of CdTe on Ge(211) Substrates by Molecular Beam Epitaxy
摘要
采用分子束外延在 3英寸 Ge(211）衬底上生长了 10 μm厚的 CdTe(211）B薄膜。CdTe表面镜面光亮，3英寸范围厚度平均值 9.72 μm，偏差 0.3 μm；薄膜晶体质量通过 X射线双晶迴摆曲线进行评价，FWHM平均值 80.23 arcsec，偏差 3.03 arcsec；EPD平均值为 4.5×106 cm－2。通过研究 CdTe薄膜厚度与 FWHM和 EPD的关系，得到 CdTe的理想厚度为 8～9 μm。
Abstract
The 10μm thick CdTe(211)B has been grown by molecular beam epitaxy(MBE) on Ge(211) substrate. The surface morphology of CdTe layers with a diameter of three inches is smooth and mirror-like. The average of thick is 9.72 μm, deviation 0.3 μm; The crystalline quality was measured by an X-ray double-crystal rocking curve, the average is 80.23 arcsec, deviation 3.03 arcsec; The EPD is 4.5×106 cm－2. We has studied the effects of the thickness onFWHM and EPD for CdTe layer, the optimum thickness of CdTe layer is 8～9 μm.
李艳辉, 杨春章, 苏栓, 谭英, 高丽华, 赵俊. Ge(211）衬底上分子束外延 CdTe薄膜[J]. 红外技术, 2011, 33(10): 598. LI Yan-hui, YANG Chun-zhang, SU Shuan, TANG Ying, GAO Li-hua, ZHAO Jun. Heteroepitaxy of CdTe on Ge(211) Substrates by Molecular Beam Epitaxy[J]. Infrared Technology, 2011, 33(10): 598.
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