通过使用两种不同波长的飞秒激光脉冲分别与硅材料相互作用，证明了在相同的激光通量下，激光功率和脉冲数之间的比例将对硅表面微结构的形成起决定性作用。在飞秒激光与硅表面相互作用的过程中，脉冲数表征激光与样品之间的作用时间长短，决定了能量传递到材料内部的深浅程度；而激光功率则表征硅表面材料的消融与挥发程度。因此，恰当地选择激光功率和脉冲数能有效形成表面具有较高尖峰的微结构硅，从而获得在宽光谱范围内均具有高吸收效率的微纳硅基光伏材料。这一结果对表面微结构材料的有效制备、表面形态控制，及其相应的光电属性等都有着重要的意义。

By using femtosecond laser pulses with two different wavelengths separately interacted with the silicon sample, it′s experimentally demonstrated that under the same laser fluence, the fabricated surface microstructure of silicon is determined by the relation between laser power and pulse number. During the fabrication process, pulse number represents the interaction time between laser pulses and sample, which determines the depth of energy transferred into the inner part of material; while the laser power represents the ability of laser to ablate and volatilize the material. The optimal selection of the laser power and pulse number can produce the microstructured silicon with a high spike height, which can realize the effective absorption of micro/nano silicon-based PV material in a wide wave band. These results are important for the efficient fabrication, surface morphology control, and the corresponding photoelectrical properties of surface-microstructured materials.