报道了一种垂直入射的InP基InGaAs pin光电探测器，介绍了它的制备和测试方法并对器件所展示出的高效，高速，高线性度特性进行了分析。器件的暗电流密度在0和-5 V偏压时分别为1.37×10-5A/cm2和93×10-5 A/cm2；在1.55 μm波长，-3 V偏压下，器件的线性光响应高达28 mW，相应的最大线性电流为17 mA，响应度达到0.61 A/W(无减反射膜)；在-5 V偏压下，器件获得高达17.5 GHz的3 dB带宽。

In this paper, we demonstrate a top-illuminated InGaAs pin photodetector grown on InP substrate. The fabrication, measurement and characterization of this photodetector are discussed in this paper. Low dark current densities of 1.37×10-5 A/cm2 at 0 and 93×10-5 A/cm2 at a reverse bias of 5 V are achieved. At a wavelength of 1.55 μm, the photodetectors have a responsivity of 0.61 A/W without antireflection coating, a linear photoresponse up to 28 mW optical power and a maximum linear photocurrent of 17 mA at -3 V. The measured 3 dB bandwidth of a 22 μm-diameter photodetector is 17.5 GHz.