中国激光, 2012, 39 (1): 0102010, 网络出版: 2011-12-22
GaSb基半导体激光器功率效率研究
Study of the Ohmic Contact of GaSb-Based Semiconductor Laser
激光器 GaSb基半导体激光器 欧姆接触 接触电阻率 功率效率 lasers GaSb-based semiconductor lasers ohmic contact contact resistance power efficiency
摘要
为了提高GaSb基半导体激光器的功率效率和可靠性，研究了GaSb基半导体激光器欧姆接触形成机理并提出了一种新型四层金属欧姆接触结构(Ni/AuGe/Mo/Au)。进行了Au/Mo/AuGe/Ni/n-GaSb在150 ℃~450 ℃退火温度下欧姆接触的实验研究，结果表明,新结构能够在250 ℃~450 ℃退火温度和10 min退火时间下形成良好的欧姆接触并具有较低的接触电阻率，有效地提高了GaSb基半导体激光器的功率效率。俄歇射线能谱分析表明，新型金属化结构中各原子之间的互扩散减少，结构表面形貌光滑、平整，有助于半导体激光器后续封装的进行，有效地提高了GaSb基半导体激光器的可靠性。
Abstract
In order to improve the power efficiency and reliability of GaSb-based semiconductor lasers, the formation mechanism of ohmic contact of GaSb-based semiconductor lasers is investigated and a new four-layer metal structure (Ni/AuGe/Mo/Au) is proposed. Au/Mo/AuGe/Ni/n-GaSb annealed at 150 ℃~450 ℃ is studied. The results show that the new structure has good ohmic contact characteristics with a low contact resistance, which is conducive to improve the power efficiency of the semiconductor lasers. It is revealed that the atom in-diffusion is decreased and the new metallization has a smooth surface morphology by the analysis of Auger electron spectroscopy, which contributes to improve the reliability of GaSb-based semiconductor lasers.
王跃, 刘国军, 李俊承, 安宁, 李占国, 王玉霞, 魏志鹏. GaSb基半导体激光器功率效率研究[J]. 中国激光, 2012, 39(1): 0102010. Wang Yue, Liu Guojun, Li Juncheng, An Ning, Li Zhanguo, Wang Yuxia, Wei Zhipeng. Study of the Ohmic Contact of GaSb-Based Semiconductor Laser[J]. Chinese Journal of Lasers, 2012, 39(1): 0102010.
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