中国激光, 2012, 39 (1): 0105003, 网络出版: 2011-12-22
掺铒硫系玻璃光纤的中红外增益特性模拟研究
Theoretical Studies on Mid-Infrared Gain Characteristics of Erbium-Doped Chalcogenide Glass Fibers
材料 掺铒硫系玻璃 中红外增益 速率传输方程 materials erbium-doped chalcogenide glass mid-infrared gain rate-propagation equation
摘要
实验制备了Er3+掺杂质量分数为1%的Ga5Ge20Sb10S65硫系玻璃,测试了其折射率、吸收光谱和荧光光谱,利用Judd-Ofelt和Futchbauer-Ladenburg理论计算了Er3+离子的自发辐射几率、吸收截面和受激发射截面等光谱参数。在综合考虑Er3+离子的交叉弛豫、能量上转换和激发态吸收效应的基础上,应用四能级粒子数速率光功率传输方程模型,模拟计算了Er3+掺杂Ga5Ge20Sb10S65硫系玻璃光纤的中红外2.74 μm波段的增益特性。结果显示,Er3+掺杂硫系玻璃光纤在2.74 μm中红外波段具有较高的信号增益和较宽的增益谱,最大增益值和20 dB增益带宽分别超过了40 dB和200 nm,表明其是可用于中红外2.74 μm波段宽带放大的理想增益介质。
Abstract
The Er3+ doped (the mass fraction is 1%) Ga5Ge20Sb10S65 chalcogenide glasses are fabricated and the refractive index, absorption spectrum and emission spectra are measured. The spontaneous emission probability, absorption cross-section and emission cross-section are calculated using the theories of Judd-Ofelt and the Futchbauer-Ladenburg equation. Based on the rate equations and light propagation equations, the numerical simulations on mid-infrared gain characteristics for the Er3+ doped Ga5Ge20Sb10S65 chalcogenide glass fiber are calculated. Effects of energy transfer between Er3+ levels due to cross-relaxation, cooperative up-conversion and excited state absorption are considered in simulation. The results show that the Er3+ doped Ga5Ge20Sb10S65 chalcogenide glass fiber has a bigger signal mid-infrared gain and wider mid-infrared gain spectrum, and its maximum signal gain and gain width at 20 dB exceeds 40 dB and 200 nm, respectively. The results indicate that the Er3+ doped Ga5Ge20Sb10S65 chalcogenide glass is a better gain medium which can be applied to broadband amplifiers in mid-infrared.
於杏燕, 戴世勋, 周亚训, 王训四, 张培晴, 刘永兴, 徐铁峰, 聂秋华. 掺铒硫系玻璃光纤的中红外增益特性模拟研究[J]. 中国激光, 2012, 39(1): 0105003. Yu Xingyan, Dai Shixun, Zhou Yaxun, Wang Xunsi, Zhang Peiqing, Liu Yongxing, Xu Tiefeng, Nie Qiuhua. Theoretical Studies on Mid-Infrared Gain Characteristics of Erbium-Doped Chalcogenide Glass Fibers[J]. Chinese Journal of Lasers, 2012, 39(1): 0105003.