半导体光电, 2011, 32 (1): 88, 网络出版: 2012-01-04  

纳米Si/SiNx超晶格实现Nd∶YVO4激光被动调Q

Passively Q-switched of a LD-pumped Nd∶YVO4 Laser with nc-Si/SiNx Superlattice Films
作者单位
华侨大学 信息科学与工程学院,福建 泉州 362021
摘要
采用射频磁控反应溅射法和热退火处理制备了纳米Si/SiNx超晶格薄膜材料。把薄膜作为可饱和吸收体插入激光二极管泵浦的平凹腔Nd∶YVO4激光器内,实现了1342nm激光的被动调Q运转,获得脉冲宽度约20ns、重复频率33.3kHz的调Q脉冲序列输出。分析了纳米Si/SiNx薄膜可饱和吸收的产生机制,认为双光子吸收是产生1342nm激光被动调Q的主要原因。对纳米Si/SiNx薄膜材料调Q激光器的速率方程组进行了数值求解,得到的调Q脉冲时间宽度的理论值和实验结果基本相符。
Abstract
The nc-Si/SiNx superlattice films were prepared by radio-frequency (RF) magnetron sputtering method and thermal annealing techinque. The passively Q-switched operation of a LD pumped Nd∶YVO4 1342nm laser was achieved by inserting the nc-Si/SiNx film as a saturable absorber into the plane-concave resonator. The pulse train with average pulse duration of 20ns and pulse repetition rate of 33.3kHz was obtained. The passively Q-switching mechanism of 1342nm laser was analyzed and it was mainly ascribed to the two-photon saturable absorption of the film. The pulse duration of Q-switched pulse was numerically calculated from the rate equations of the passively Q-switched laser with nc-Si/SiNx film, which was consistent with the experimental results.

王燕飞, 王加贤, 张培, 杨先才, 沈海波. 纳米Si/SiNx超晶格实现Nd∶YVO4激光被动调Q[J]. 半导体光电, 2011, 32(1): 88. WANG Yanfei, WANG Jiaxian, ZHANG Pei, YANG Xiancai, SHEN Haibo. Passively Q-switched of a LD-pumped Nd∶YVO4 Laser with nc-Si/SiNx Superlattice Films[J]. Semiconductor Optoelectronics, 2011, 32(1): 88.

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