基于金属援助硅化学刻蚀机理，成功地发展了一种形貌可控地制备硅纳米线阵列的有效方法。在该方法中，通过银纳米颗粒催化层的微结构和硅化学刻蚀的时间来调控硅纳米线阵列的形貌。扫描电子显微镜(SEM)形貌表征的实验结果证实：硅纳米线阵列的孔隙率依赖银纳米颗粒催化层的微结构，硅纳米线阵列的高度依赖于硅的刻蚀时间。这种形貌可控地制备单晶硅纳米线阵列的方法简单、有效，可用于构筑硅纳米线光伏电池等各种硅基纳米电子器件。

A reasonable method is developed for synthesis of Si nanowire(SiNW) arrays with controlled morphology on the basis of the mechanism of metalassisted silicon chemical etching. In this method, SiNW arrays have been synthesized by metal(a discontiguous Ag thin film) assisted silicon chemical etching and the morphology of the arrays is controlled by the structure of discontiguous Ag thin film and Si chemical etching time. Detailed scanning electron microscopy(SEM) observations demonstrate that the array density depends on morphology of the Ag thin film and the array height depends on the etching time. The investigation results provid a simple and efficient way to controllable preparation of silicon nanowire arrays for various nanoelectron devices, such as silicon nanowire solar cells.