重点讨论了像元尺寸为11μm×11μm的4096×4096元可见光CCD全帧转移结构和技术性能参数的设计，采用CCD埋沟工艺和辐射加固技术，研制出了高性能4096×4096元可见光CCD。结果表明器件动态范围达到75dB，读出噪声电子数为30，暗电流产生率为2mV/s，响应非均匀性为2%，非线性为0.4%，且具有抗γ射线辐射能力。

Full frame transfer CCD with the pixel size of 11μm×11μm and active pixel of 4096(H)×4096(V)was fabricated by adopting CCD buried channel and radiation hardness technique. Tests results indicate the dynamic range of the device reaches 75dB, and such features as read noise electrons of 30e-, darkcurrent generation rate of 2mV/s, light response nonuniformity of 2.0%, nonlinearity of 0.4% and γray radiation tolerance are obtained.