设计并研制了一种新的直脊波导集总型电吸收调制器——集总型双耗尽电吸收调制器(DEAM)。同时，作为实验对照组，还制备了一种普通有源区结构的电吸收调制器(NEAM)。两种器件的测试结果对比分析表明，DEAM的电容明显要小于NEAM。脊波导长度为250μm，宽度为2.5μm的DEAM在-3V偏压下电容为0.225pF，对应的调制带宽估算为28.3GHz；1550nm输入波长条件下，DEAM在偏压为-1V至-2V之间调制效率最大，达到10dB/V，而-3V、-6V下的调制深度分别为22dB和26dB，满足40Gbit/s光纤通信要求。

A novel dualdepletion lumped electroabsorption modulator (DEAM) was designed and fabricated. Meanwhile, a normal Electroabsorption modulator (NEAM) with active structure was fabricated for comparative study. The measured results indicate that the capacitance of DEAM was obviously smaller than that of NEAM. The capacitance of DEAM with a 2.5μm waveguide was 0.225pf under -3V bias voltage and the 3dB bandwidth correspondingly achieved 28.3GHz. The modulation depth at -3V was 22dB and even 26dB at -6V for 1550nm signal input. In addition, the largest modulation efficiency attained 10dB/V with the bias of -1～-2V. It is proved that the DEAM can satisfy the application of 40Gbit/s communication system.