采用单槽电化学腐蚀法在预置有倒金字塔结构的n型单晶硅上制备用于二维光子晶体的多孔硅。利用基于LabVIEW的虚拟仪器技术对实验仪器编程,搭建实时测控系统,实现对反应过程中所需电源的控制,并且实时显示采集到的随时间变化的电压和电流信号,将采集的数据存储在计算机里。实验表明,恒电流供电模式下致使电压剧烈变动,导致多孔硅侧向腐蚀严重,然而,恒电压供电模式下,能够有效地抑制侧向腐蚀。

Porous silicon for 2D photonic crystal is fabricated by the electrochemical etching method on a patterned monocrystalline silicon substrate immersed into a single-cell with HF solution and illuminated by a halogen lamp. The programmable instrument used in the investigation was interfaced with a computer and communicated by LabVIEW. The variation of the voltage or current between sample(cathode) and platinum(anode) can be surveyed and the data can be memorized in the computer by a program in-situ during the procedure of porous silicon formation performed by a constant-current/voltage supplier. The experimental results demonstrated that the voltage under constant-current condition was frequently changed and generated severe lateral erosion. However, the lateral erosion can be suppressed by the constant-voltage supplier.