在特定的气体氛围下，用一定能量密度的超短脉冲激光连续照射单晶硅片表面，或者离子注入在硅中引入硫族元素等方法，可在硅表面得到具有奇特光电性质的微米量级尖锥结构，该微锥结构被称为黑硅。这一新材料有奇特的光电性质，如对0.25~17 μm波长的光有强烈的吸收、具有良好的场致发射特性等，为硅提供许多新的功能。在四能级光吸收模型下，以硅中引入硫族杂质为特例分析微构造硅对太阳光利用的增强，详细研究了在硅的禁带中引入两个不同硫族杂质中间能级时的电离能与光损失的关系。

Black silicon with quasi-regular arrays of micrometer-sized spikes, which is obtained by irradiating the surface of a Si wafer with ultrafast laser pulses in the presence of a chalcogen-bearing gas, or prepared by ion implantation and pulsed-laser-melting-induced rapid solidification. This new material has unusual optical and electrical properties, such as strong absorption of light with wavelength between 0.25 μm and 17 μm, nice field emission characteristics and so on, offers silicon many new features. Taking chalcogen as example, the enhancement of light absorption of the microstructured silicon is analyzed under four-level model. A detailed study on the relationship between the light loss and the ionization energy of doped impurities in silicon with two different impurity bands.