激光与光电子学进展, 2012, 49 (5): 051601, 网络出版: 2012-02-08
利用光致发光法测定AlxGa1-xN外延膜中的铝元素含量
Al Contents of AlxGa1-xN Epitaxial Films Studied by Photoluminescence Technique
薄膜 AlGaN外延膜 光致发光 弯曲因子 CASTEP软件 thin films AlGaN epitaxial film photoluminescence bowing parameter CASTEP software
摘要
采用深紫外光致发光技术测量AlxGa1-xN半导体异质外延膜的禁带宽度,结合Material Studio软件中的CASTEP模块模拟计算AlxGa1-xN异质外延膜材料的弯曲因子,测定了AlxGa1-xN外延膜样品中的Al元素物质的量分数。结果表明,发射波长为224.3 nm的HeAg激光器能够激发AlxGa1-xN半导体材料产生发光现象。CASTEP软件模拟计算得到AlxGa1-xN的弯曲因子为1.01462±0.06772 eV,认为其弯曲因子在1.0 eV附近,由此可以理论计算得到具有Al组分梯度的一系列AlxGa1-xN外延膜样品中的Al元素物质的量分数。
Abstract
Deep-ultraviolet photoluminescence technique is used to investigate the band gaps of AlxGa1-xN epitaxial films. The bowing parameter of AlxGa1-xN is studied by CASTEP module of Material Studio simulation software and the Al molar fractions of AlxGa1-xN epitaxial films are researched. The result shows that the HeAg laser with 224.3 nm emission wavelength can make AlxGa1-xN material produce luminescence. The bowing parameter of AlxGa1-xN epitaxial film is calculated with CASTEP software simulation to be 1.01462±0.06772 eV, from which we can calculate the Al molar fractions of AlxGa1-xN epitaxial films.
王雪蓉, 魏莉萍, 郑会保, 刘运传, 周燕萍, 孟祥艳. 利用光致发光法测定AlxGa1-xN外延膜中的铝元素含量[J]. 激光与光电子学进展, 2012, 49(5): 051601. Wang Xuerong, Wei Liping, Zheng Huibao, Liu Yunchuan, Zhou Yanping, Meng Xiangyan. Al Contents of AlxGa1-xN Epitaxial Films Studied by Photoluminescence Technique[J]. Laser & Optoelectronics Progress, 2012, 49(5): 051601.