采用磁控溅射及后退火技术制备了不同组份和不同退火温度的Ge、Al共掺SiO2薄膜。通过对样品的X射线光电子能谱(XPS)测试，确定了薄膜的成分和结构特征；同时还测试了样品的光致发光谱(PL谱),得到了峰值位于420 nm附近的紫光发射峰和峰值位于470 nm的蓝光发射峰。实验结果表明， Al的掺杂不仅可以显著地提高GeNOV中心和SiNOV中心的光发射效率，还可以促进GeNOV缺陷和SiNOV缺陷中心的形成，进而有利于薄膜的光致发光。

Different contents of Ge and Al co-doped SiO2 films are prepared by RF magnetron sputtering technique and thermal annealing. From XPS spectra determination,we make sure the films contents and structure.Then we also determine the films PL spectra,which exhbit a V-band in around 420 nm beam and a B-band in 470 nm beam.Our experiments suggest that doped Al not improves luminescence efficiency of GeNOV and SiNOV defects centres but is of advantage to the defect centres fabrication.