红外与毫米波学报, 2012, 31 (1): 11, 网络出版: 2012-02-13
基于N-on-P结构的背照射延伸波长640×1线列InGaAs探测器
Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination
ICP刻蚀 N-on-P结构 线列探测器 光电性能 N-on-P configuration ICP etching linear detector array photoelectric characteristics
摘要
在N-on-P型In0.78Al0.22As/In0.78Ga0.22As外延材料上，采用感应耦合等离子体(ICP)刻蚀技术制备了背照射640×1线列InGaAs探测器芯片，研究了探测器光电性能.结果表明，室温下单元器件响应截止波长和峰值波长分别为2.36 μm和1.92 μm，平均优值因子(R0A)为16.0Ω·cm2，峰值量子效率达到了37.5％；在1 ms积分时间下焦平面探测器平均峰值探测率达到了2.01×1011 cmHz1/2/W，响应非均匀性为8.77%，盲元率约为0.6%.
Abstract
Back-illuminated 640×1 linear InGaAs detector arrays were fabricated on the In0.78Al0.22As/In0.78Ga0.22As material of N-on-P configuration by the inductively coupled plasma (ICP) etching. The photoelectric characteristics of the detector were investigated. The results indicated that the cutoff-wavelength and peak-wavelength are 2.36 μm and 1.92 μm, respectively, at room temperature. The average value of R0A is 16.0 Ω·cm2 and the quantum efficiency of the peak wavelength reaches to 37.5%. Otherwise, the average peak detectivity of linear detector array reaches to 2.01×1011 cmHz1/2/W, the response nonuniformity is about 8.77% and the defective pixel ratio is 0.6% for 1 ms of integrate time.
朱耀明, 李永富, 李雪, 唐恒敬, 邵秀梅, 陈郁, 邓洪海, 魏鹏, 张永刚, 龚海梅. 基于N-on-P结构的背照射延伸波长640×1线列InGaAs探测器[J]. 红外与毫米波学报, 2012, 31(1): 11. ZHU Yao-Ming, LI Yong-Fu, LI Xue, TANG Heng-Jing, SHAO Xiu-Mei, CHEN Yu, DENG Hong-Hai, WEI Peng, ZHANG Yong-Gang, GONG Hai-Mei. Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination[J]. Journal of Infrared and Millimeter Waves, 2012, 31(1): 11.
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