采用化学溶液方法，在LaNiO3/Si(100)衬底上生长了Nd掺杂的BiFeO3薄膜.XRD分析结果表明，随着Nd掺杂量的增加，薄膜晶格变小，Nd掺杂量为20%时，薄膜出现杂相.介电测试表明，随着Nd掺杂量的增加，介电常数和损耗减小，Nd掺杂量为2％的薄膜表现出很强的介电色散现象并出现介电损耗弛豫峰，其符合类德拜模型特征.随着Nd掺杂量增加，薄膜的漏电流减小，在低电场下，电流输运遵从SCLC模型，在高场下，电流输运遵循Poole-Frenkel模型.分析结果表明Nd掺杂对薄膜微结构和电学性能有显著影响.

The Nd doped BiFeO3 thin films are prepared on LaNiO3/Si (100) substrate by chemical solution deposition method. The results of x-ray diffraction show that the lattice constant of thin films decreases with the increase of Nd content. The impurity phases are found in the thin film with 20% Nd content. The results of dielectric measurement indicate that the dielectric constant and loss of thin films decrease with the increase of Nd content. A very strong dielectric frequency dispersion and relaxation of dielectric loss peak occurs in the thin film with 2% Nd content and it follows Debye-like law. The leakage current of thin films decreases with the increase of Nd content. The current transport follows SCLC model in low electric field region and follows Poole-Frenkel model in high electric field region. These results suggest that Nd doping has a strong influence on microstructure and electric properties of BiFeO3 thin films.