硅基微通道板(MCP)的重要技术挑战之一就是如何在硅基上制作高深宽比的微孔阵列结构。采用光助电化学刻蚀方法研究硅基高深宽比微孔阵列制作技术。考虑到实际反应条件下的物质输送、刻蚀液浓度、光照条件、温度等因素的影响都体现在刻蚀电流与电压上，重点研究了电流、电压与微结构形貌之间的关系。通过空间电荷区的大小以及刻蚀电流与溶液浓度之间的关系，得到合理的刻蚀参数。在5 inch (1 inch=2.54 cm)硅基上制作出深度达200 μm以上的均匀深孔，得到大面积、高深宽比的均匀微孔阵列，满足微通道板对结构形貌的要求。

One grand challenge of silicon-based microchannel plate (MCP) fabrication is to make the micro-pore array of high aspect ratio on the silicon wafer. Photo-assisted electrochemical etching technique is used to make such micro-pore arrays on n-type silicon substrate. Considering that the influences of matter transportation, solution concentration, illumination and temperature are reflected by the etching current and voltage under the actual etching conditions, the research is focused on the effects of the etching voltage and current on the morphology of the micro-pores. According to the structure and morphology of deep etching pores, the current, voltage and illumination are modified. Finally, the micro-pores of depth over 200 μm are fabricated on a 5 inch (1 inch=2.54 cm) silicon wafer. The large-area uniform pore array of high-aspect ratio is obtained. It meets the structure parameter requirements of MCP post-production.