红外与毫米波学报, 2012, 31 (2): 118, 网络出版: 2012-04-13
石墨烯基红外探测器的高k栅氧集成
High-k gate oxides integration of graphene based infrared detector
摘要
从石墨烯发现与制备出发，综述了室温下双层石墨烯或石墨烯带禁带在0～250 meV可调的特性，及其在中远红外探测器的背栅、顶栅结构中作为栅氧形成材料的应用，并介绍了目前各种先进工艺.
Abstract
This review gives an introduction to the discovery and fabrication of the graphene, back-gated and top-gated GFET with the possible tunable band-gap of 0~250 meV at room temperature for middle and far infrared detector application, radio frequency GFET application and other advanced high k gate oxides integration processes.
周鹏, 魏红强, 孙清清, 叶立, 陈琳, 吴东平, 丁士进, 张卫. 石墨烯基红外探测器的高k栅氧集成[J]. 红外与毫米波学报, 2012, 31(2): 118. ZHOU Peng, WEI Hong-Qiang, SUN Qing-Qing, YE Li, CHEN Lin, WU Dong-Ping, DING Shi-Jin, ZHANG Wei. High-k gate oxides integration of graphene based infrared detector[J]. Journal of Infrared and Millimeter Waves, 2012, 31(2): 118.
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