采用N2O plasma处理SiNx薄膜作为绝缘层，以室温下沉积的铟镓锌氧化物(IGZO)作为有源层制备了IGZO薄膜晶体管。与常规的IGZO-TFT相比，N2O plasma处理过的IGZO-TFT的迁移率由原来的4.5 cm2·V-1·s-1增加至8.1 cm2·V-1·s-1，阈值电压由原来的11.5 V减小至3.2 V，亚阈值摆由原来的1.25 V/decade减小至0.9 V/decade。采用C-V方法计算了两种器件的陷阱态，结果发现N2O plasma处理过的IGZO-TFT的陷阱态明显小于普通的IGZO-TFT的陷阱态，表明N2O plasma处理SiNx绝缘层是一种改善IGZO-TFT器件性能的有效方法。

Indium-gallium-zinc oxide thin film transistor(IGZO-TFT) was fabricated using N2O plasma treated SiNx film as gate insulator and room-temperature deposited IGZO film as active layer. Comparing with the conventional IGZO-TFT, the saturation mobility increased from 4 5 to 8.1 cm2·V-1·s-1, threshold voltage reduced from 11.5 to 3.2 V, threshold swing varied from 1.25 to 0.9 V/dec. The trap states in the N2O plasma treated IGZO-TFT is obviously smaller than that in the conventional IGZO-TFT. Our results indicate that using N2O plasma treated SiNx film as gate insulator is an effective approach for improving IGZO-TFT performance.