利用等离子体增强化学气相沉积(PECVD)技术，在ZnO/ZnMgO异质结构上制备SiO2作为栅绝缘层，采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下，栅绝缘层产生钝化，从而能够改善器件的性能。

The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor (HFET) were reported in this paper. The HFET was grown on α-plane sapphire substrate by metal-organic vapor phase epitaxy (MOVPE) technology, and was fabricated by a conventional photolithography technique combined with wet etching. The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS·mm-1 and mobility of 182 cm2·V-1·s-1 at room temperature. The property was limited by leakage current through the SiO2 gate insulator. At low temperature, the performance was improved due to the reduced leakage current.