以SiH4和CH4为气源，在不同的工艺条件下用增强化学气相沉积（PECVD）方法制备了一系列Si-C-H薄膜，并对薄膜的结构和性能进行了一系列测试分析，研究了薄膜的结构性能特点以及CH4/SiH4比和射频功率等工艺参数对薄膜结构和性能的影响。发现薄膜中主要形成的是嵌有Si晶粒的非晶态SiC结构，H原子主要以C-H键形式存在。高的射频功率和CH4/SiH4比均有利于Si-C的形成，而较低的CH4/SiH4比可以提高薄膜的晶态率。薄膜的电阻率随着CH4/SiH4比的增大而增大，随着射频功率的增大而减小。

Si-C-H thin films were prepared by using plasma-enhanced chemical vapor deposition (PECVD) method under different processing parameters, with the gas mixture of CH4 and SiH4. The influence of the processing parameters, such as CH4/SiH4 and radio-frequency power density, on the structure and properties of the films were analyzed. The results suggested that the films were composed of amorphous SiC, in which Si crystalline grains inlayed, and hydrogen atoms were in a C-H configuration. Higher radio-frequency power density and CH4/SiH4 value would accelerate the formation of Si-C configuration, but lower CH4/SiH4 value would accelerate the crystallization of the films. The electrical resistivity of the films increases with the increase of CH4/SiH4 value, but decreases with the increase of the radio-frequency power density.