半导体光电, 2012, 33 (1): 83, 网络出版: 2012-04-20
In∶Fe∶Cu∶LiNbO3晶体光全息存储性能的研究
Research on Optical Holographic Storage Properties in In∶Fe∶Cu∶LiNbO3 Crystals
摘要
采用提拉法生长了In∶Fe∶Cu∶LiNbO3晶体,测试了晶体的紫外可见光谱、红外吸收光谱。利用二波耦合方法测试了晶体的响应时间、最大衍射效率、计算晶体的光折变灵敏度。结果表明,随In3+离子浓度的增加,在In3+浓度较低时,In∶Fe∶Cu∶LiNbO3晶体紫外可见光吸收边发生紫移,而红外吸收峰3482cm-1位置基本不变,但浓度达到阈值时,紫外可见光吸收边相对于低浓度发生红移,而红外吸收峰向高波数方向移动;In3+浓度增加时,响应时间变短,最大衍射效率下降,晶体存储灵敏度提高。
Abstract
In:Fe:Cu:LiNbO3 crystals were grown by the Czochralski method, and ultraviolet visible light absorption and infrared absorption spectra were measured. The response time and the aximum diffraction efficiency were measured by two-wave coupling experiment, and the photorefractive sensitivity were calculated. The results show that under low concentration of In3+, with the increasing concentration of In3+,the absorptions of ultraviolet visible light of In∶Fe∶Cu∶LiNbO3 shift to the violet and the infrared absorption peak at 3482cm-1 was invariant, but red shift of ultraviolet visible light happens and the infrared absorption moves to high wavenumber when the concentration of In3+ comes to the threshold. The photorefractive sensitivity increases and the aximum diffraction efficiency and the response times decrease with the increase of In3+ doping concentration.
符运良. In∶Fe∶Cu∶LiNbO3晶体光全息存储性能的研究[J]. 半导体光电, 2012, 33(1): 83. FU Yunliang. Research on Optical Holographic Storage Properties in In∶Fe∶Cu∶LiNbO3 Crystals[J]. Semiconductor Optoelectronics, 2012, 33(1): 83.