中国激光, 2012, 39 (4): 0407002, 网络出版: 2012-05-02   

WSx薄膜的脉冲激光沉积可控制备

Controllable Preparation of WSx Film by Pulsed Laser Deposition
作者单位
1 浙江工业大学机械工程学院, 浙江 杭州 310014
2 常州大学材料科学与工程学院, 江苏 常州 213164
摘要
采用脉冲激光沉积法(PLD)在单晶硅基底上制备了WSx固体润滑薄膜。利用X射线能谱仪(EDS)、扫描电子显微镜(SEM)、X射线衍射仪(XRD)对薄膜的成分、形貌和微观结构进行了分析,采用球盘式磨损试验机在大气(相对湿度为50%~55%)环境下评价薄膜的摩擦学特性。结果表明:薄膜中S和W的原子数分数比(简称S/W比)在1.05~3.75之间可控,摩擦系数为0.1~0.2;S/W比高于2.0时薄膜成膜质量和摩擦系数显著恶化。正交试验法得出影响薄膜S/W比的因素主次顺序分别是气压、温度、靶基距和激光通量;最优工艺参数是温度150 ℃、靶基距45 mm、激光通量5 J/cm2、气压1 Pa,可获得结构致密、成分接近化学计量比的WSx薄膜。
Abstract
WSx solid lubrication films are deposited on monocrystalline silicon substrates by pulsed laser deposition (PLD). The composition, morphology and microstructure of the films are characterized by energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and X-ray diffractometer respectively. The tribological behavior is investigated using a ball-on-disk tribometer in atmosphere (relative humidity is 50%~55%). The results show that the composition of the film was controllable while the atom fraction ratio of sulfur to tungsten ranges from 1.05 to 3.75 and the friction coefficient ranges from 0.1 to 0.2. The friction coefficient and film quality deteriorates dramaticly when the ratio of sulfur to tungsten exceeds 2.0. It is well-established that the rank of main influence factors related to the ratio of sulfur to tungsten of the WSx films are argon pressure, temperature, target-substrate distance and laser flux by orthogonal test, and a near-stoichiometric WSx film with dense structure could be grown under optimized growth conditions, including deposit temperature at 150 ℃, distance between target and substrate at 45 mm and laser flux at 5 J/cm2 and argon pressure at 1 Pa.

张继, 郑晓华, 寇云峰, 宋仁国. WSx薄膜的脉冲激光沉积可控制备[J]. 中国激光, 2012, 39(4): 0407002. Zhang Ji, Zheng Xiaohua, Kou Yunfeng, Song Renguo. Controllable Preparation of WSx Film by Pulsed Laser Deposition[J]. Chinese Journal of Lasers, 2012, 39(4): 0407002.

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