通过对比分析目前氮化物LED的三种主要衬底即蓝宝石、SiC与Si的技术特点, 指出了发展Si衬底LED的重要意义。详细介绍了目前国内外Si衬底LED的研究现状, 解析了在Si衬底上制备LED的多种新型技术, 主要包括以提高薄膜沉积质量为目的的缓冲层技术、激光脱离技术、图案掩模技术、阳极氧化铝技术, 以及以提高光提取率为宗旨的镜面结构技术和量子阱/量子点技术。这些新型技术与传统的MOCVD, HVPE, MBE等制备技术相结合, 在很大程度上克服了Si衬底的不足, 使Si衬底上氮化物LED展现出广阔的发展前景。

The technical states of nitridebased lightemitting diodes (LEDs) grown on three major substrates of sapphire, SiC and Si are reviewed comparatively, and recent developments of LEDs on Si substrates and some new fabrication techniques are presented, including those aiming to improve the doping quality of nitride film such as buffer layer, patterned substrate, laser lift off, and AAO, and those for enhancing light extraction efficiency of LEDs such as mirror structure and multiple quantum wells/quantum dots. These new technologies combining with traditional MOCVD, HVPE, and MBE methods can help to overcome the main disadvantages of Si substrates for LEDs.