半导体光电, 2012, 33 (2): 188, 网络出版: 2012-05-22
湿法表面粗化提高倒装AlGaInP LED外量子效率
Improvement of External Quantum Efficiency of AlGaInPbased Waferbonding LEDs by Wet Chemical Etching and Surface Roughening
选择性腐蚀 湿法腐蚀 表面粗化 外量子效率 AlGaInP AlGaInP selective corrosion wet chemical etching surface roughening external quantum efficiency
摘要
介绍了一种利用盐酸、磷酸混合液对不同Al组分(AlxGa1-x)0.5In0.5P的选择性腐蚀特性对倒装AlGaInP红光LED进行表面粗化的方法。通过向粗化层GaInP加入适量的Al, 在Al组分为0.4时, 利用体积比为1∶10的HCl∶H3PO4可以得到横向尺寸约为60nm, 纵向尺寸约为150nm的最有利于出光的类三角圆锥型表面结构。器件测试结果表明, 在20mA注入电流下, 器件外量子效率比粗化前提高了80%。
Abstract
A method of surface roughening is introduced to flipchip AlGaInP red LEDs by utilizing selective etching properties of hydrochloric acid and phosphoric acid mixture to different Al compositions of (AlxGa1-x)0.5In0.5P. After adding a certain amount of Al into the roughening layer GaInP and being etched by 1∶10 volume ratio of HCl∶H3PO4, a trianglelike cone surface structure which is most benefit for light extraction could be obtained. The width of the cone is about 60nm and the height is about 150nm when the Al composition is 0.4. Test results show that, under 20mA injection current, the external quantum efficiency is increased by 80% after roughening.
白继锋, 高欣, 薄报学, 黄尊祥, 陈凯轩, 马祥柱. 湿法表面粗化提高倒装AlGaInP LED外量子效率[J]. 半导体光电, 2012, 33(2): 188. BAI Jifeng, GAO Xin, BO Baoxue, HUANG Zunxiang, CHEN Kaixuan, MA Xiangzhu. Improvement of External Quantum Efficiency of AlGaInPbased Waferbonding LEDs by Wet Chemical Etching and Surface Roughening[J]. Semiconductor Optoelectronics, 2012, 33(2): 188.
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