设计并制备了一种带有电流导引结构的新型倒装AlGaInP LED。实验结果表明，在20 mA直流电流注入下，器件的电压为2.19 V，输出光功率与普通倒装器件相比提高了17.33%。通过电流导引结构，使得器件注入电流被主动引导到电极以外部分，有效增大了上电极以外部分有源区中用于发光的有效载流子数目的比例，同时减轻了电流密度过大现象，大大提高了器件的出光效率。

A new flip-chip AlGaInP LED with current-guiding structure is designed. Experimental results show that the output optical power increases by 17.33% than that of the ordinary flip-chip AlGaInP LED with a voltage of 2.19 V at the injection current of 20 mA. Through the current-guiding structure, the injection current of device is actively guided outside of the electrodes, effectively increasing the effective carrier number for luminescence in the active area outside the electrode, while reducing the current crowding phenomenon. This greatly improves the optical efficiency of the device.