为了提高852 nm半导体激光器的温度稳定性，理论计算了InGaAlAs、InGaAsP、InGaAs和GaAs量子阱的增益，模拟对比并研究了不同量子阱的增益峰值和峰值波长随温度的漂移。结果显示，采用In0.15Ga0.74-Al0.11As作为852 nm半导体激光器的量子阱可以使器件同时具有较高的增益峰值和良好的温度稳定性。使用金属有机化学气相沉积(MOCVD)外延生长了压应变In0.15Ga0.74Al0.11As单量子阱852 nm半导体激光器，实验测得波长随温度漂移的数值为0.256 nm/K，实验测试结果验证了理论计算结果。

In order to enhance the temperature stability of 852 nm laser diode, the gain of InGaAlAs, InGaAsP, InGaAs and GaAs quantum-wells were calculated by a comprehensive model theory, and the peak gain and wavelength versus operation temperature for the six different quantum-wells were compared and discussed. The results indicate that In0.15Ga0.74Al0.11As quantum-well is the most appropriate candidate for 852 nm laser diode when the higher gain and better temperature stability demanded simultaneously. Compressive-strained In0.15Ga0.74Al0.11As single quantum-well 852 nm laser diode was grown by metal-organic chemical vapor deposition (MOCVD). The wavelength shift with temperature for 852 nm laser diode is 0.256 nm/K, the experimental results are in good agreement with theoretical calculation results.