利用连续波段外激光辐照光导型碲镉汞探测器.实验表明，探测器对波段外激光有响应，且存在一个特定拐点温度T0.当探测器温度T＜T0时，响应电压随温度升高而增大；当T＞T0时，响应电压随温度的升高而减小.研究表明，探测器胶层的热瓶颈作用会导致响应电压存在两个响应时间尺度，拐点温度由芯片掺杂浓度决定.当T＜T0时，响应电压主要由随温度变化的载流子迁移率决定；当T＞T0时，响应电压主要受热激发载流子的影响.

The response of photoconductive HgCdTe detectors to the irradiation of CW bandoff laser was studied. It was found that there is a point of inflexion, T0, on the temperature dependence of the voltage response of the detector. The voltage response increases with temperature for temperature of the detector T＜T0, and decreases with temperature for T＞T0. Two time scales are found to be due to the two thermally resistive bonding layers. The inflection temperature is determined by the impurity concentration. For temperature T＜T0, the temperature dependence of the voltage response depends on the variation of mobility of the carrier , whereas T＞T0, thermally generated carriers contribute to the voltage response.