光子学报, 2012, 41 (6): 700, 网络出版: 2012-06-19   

CuO薄膜的制备及其光伏特性

Fabrication of CuO Films and the Study of Its Photovoltaic Properties
作者单位
1 陕西师范大学 物理学与信息技术学院,西安 710062
2 武警工程大学 基础部,西安 710086
3 航天第十六研究所,西安 710100
摘要
通过反应磁控溅射在n型硅和玻璃衬底上制备了p型CuO薄膜.使用X射线衍射仪和紫外可见光近红外光度计研究了p型CuO薄膜的结构和光学特性,得出其平均晶粒尺寸和光学带隙分别为8 nm和1.36 eV.通过研究其电压电流关系确定了在p型CuO薄膜和n型硅衬底之间形成了pn结.在AM 1.5光照条件下pCuO/nSi电池的开路电压为0.33 V,短路电流密度为6.27 mA/cm2, 填充因数和能量转化效率分别为0.2和0.41% .
Abstract
pCuO films were deposited on nSi and glass substrates through reactive magnetron sputtering. The structural and optical properties of the pCuO films were investigated using Xray diffraction (XRD) and UVVisNIR spectrophotometer. The average crystal size and optical band gap of the deposited pCuO films were determined to be ~8 nm and ~1.36 eV, respectively. The formation of a pn junction between the pCuO film and nSi substrate was confirmed by examining the currentvoltage behavior of the junction. The pCuO/nSi junction cell had an opencircuit voltage of 0.33 V and shortcircuit current density of 6.27 mA/cm2 under AM 1.5 illumination. The fill factor and energy conversion efficiency were 0.2 and 0.41%, respectively.

张君善, 郭林肖, 高斐, 刘晓静, 宋美周, 李宁. CuO薄膜的制备及其光伏特性[J]. 光子学报, 2012, 41(6): 700. ZHANG Junshan, GUO Linxiao, GAO Fei, LIU Xiaojing, SONG Meizhou, LI Ning. Fabrication of CuO Films and the Study of Its Photovoltaic Properties[J]. ACTA PHOTONICA SINICA, 2012, 41(6): 700.

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