光子学报, 2012, 41 (6): 700, 网络出版: 2012-06-19
CuO薄膜的制备及其光伏特性
Fabrication of CuO Films and the Study of Its Photovoltaic Properties
摘要
通过反应磁控溅射在n型硅和玻璃衬底上制备了p型CuO薄膜.使用X射线衍射仪和紫外可见光近红外光度计研究了p型CuO薄膜的结构和光学特性,得出其平均晶粒尺寸和光学带隙分别为8 nm和1.36 eV.通过研究其电压电流关系确定了在p型CuO薄膜和n型硅衬底之间形成了pn结.在AM 1.5光照条件下pCuO/nSi电池的开路电压为0.33 V,短路电流密度为6.27 mA/cm2, 填充因数和能量转化效率分别为0.2和0.41% .
Abstract
pCuO films were deposited on nSi and glass substrates through reactive magnetron sputtering. The structural and optical properties of the pCuO films were investigated using Xray diffraction (XRD) and UVVisNIR spectrophotometer. The average crystal size and optical band gap of the deposited pCuO films were determined to be ~8 nm and ~1.36 eV, respectively. The formation of a pn junction between the pCuO film and nSi substrate was confirmed by examining the currentvoltage behavior of the junction. The pCuO/nSi junction cell had an opencircuit voltage of 0.33 V and shortcircuit current density of 6.27 mA/cm2 under AM 1.5 illumination. The fill factor and energy conversion efficiency were 0.2 and 0.41%, respectively.
张君善, 郭林肖, 高斐, 刘晓静, 宋美周, 李宁. CuO薄膜的制备及其光伏特性[J]. 光子学报, 2012, 41(6): 700. ZHANG Junshan, GUO Linxiao, GAO Fei, LIU Xiaojing, SONG Meizhou, LI Ning. Fabrication of CuO Films and the Study of Its Photovoltaic Properties[J]. ACTA PHOTONICA SINICA, 2012, 41(6): 700.