提出了一种基于静电放电（ESD）的芯片可靠性测试及失效分析流程，并且以芯片静电放电测试为例详细阐述了芯片失效分析的过程与实现方法，包括电性失效分析和物理失效分析。通过专用仪器对芯片进行了静电放电测试，并利用红外微光显微镜（EMMI）及砷化镓铟微光显微镜(InGaAs)等实现芯片故障定位，从而确定芯片的失效模式与失效机理，实验证明该方法切实有效，这种失效分析的结果对优化集成电路的抗静电设计以及外部工作环境的完善都具有重要的参考意义。

A process of reliability test and failure analysis based on ESD （Electro-Static Discharge）was put forward, and an example was expounded in detail to illustrate the approach to failure analysis, including electrical failure analysis and physical failure analysis. ESD test was carried out on a chip with certain instruments such as EMMI and InGaAs microscopes, and the failure modes and mechanisms were presented. This method was proved to be effective and have important reference value for the improvement of IC antistatic design and working environment.