中国激光, 1988, 15 (11): 701, 网络出版: 2012-08-13
中子辐照单晶硅与激光退火制备SOI结构的研究
Fabrication of SOI structure by means of laser annealed neutron-irradiated single crystal silicon
摘要
Abstract
A semiconductor on semiinsulator (SOI) structure was obtained in which the insulator substrate is neutron-irradiated silicon, then annealed with CW Ar+ or Q switched Nd; YAG laser, semiconductor layer was obtained and the implanted impurities in it was activated. The experimental results proved it to be an ideal material for developing SOI devices by low-temperature process.
王顺, 李琼, 林成鲁. 中子辐照单晶硅与激光退火制备SOI结构的研究[J]. 中国激光, 1988, 15(11): 701. Wang Shen, Li Qiong, Lin Chenglu. Fabrication of SOI structure by means of laser annealed neutron-irradiated single crystal silicon[J]. Chinese Journal of Lasers, 1988, 15(11): 701.
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