采用射频磁控溅射法, 在石英玻璃衬底上制备出了性能良好的H掺杂AZO透明导电薄膜, 通过XRD、Hall、UV-Vis等测试手段, 研究了氩气气氛中退火温度对薄膜电学热稳定性的影响。实验结果显示, 随着退火温度的升高, 薄膜中载流子的浓度和迁移率下降。分析认为, 这与薄膜中氢的逸出密切相关。

HAZO films were prepared on quartz substrates by RF magnetron sputtering in Ar+H2 gas ambient at room temperature. The effects of post-annealing in pure Ar atmosphere on the structural, optical and electrical properties of the HAZO films were investigated. It was found that post-annealing treatment was beneficial to crystallization of HAZO thin films, while caused a large degradation of the conductivity. The increase in the resistivity of HAZO thin films was attributed to the doped hydrogen atoms diffuse out after annealing. It was showed that interstitial hydrogen atoms (Hi) and substitutional hydrogen atoms (HO) at an O site removed from films, as well as the effect of H passivating deep acceptors and dangling bonds gradually eliminated as the heating temperature was increased.