研究了不同能量的电子束辐照对GaN基发光二极管(Light emitting diode, LED)发光性能的影响。利用实验室提供的电子束模拟空间电子辐射, 对GaN基LED外延片进行1.5, 3.0, 4.5 MeV电子束辐照实验, 并应用光致发光(Photoluminescence, PL)谱测试发光性能。结果表明: 在1.5 MeV电子束辐照下, 采用10 kGy剂量辐照时, LED的发光强度增加约25%; 而在100 kGy剂量辐照时, LED的发光强度降低约16%。3 MeV的电子束辐照可使原来色纯度不高的LED的色纯度变好, 而更高能量的辐照将会引起器件失效。

The influence of different energy electron beam irradiation on the luminescence properties of GaN-based LED has been studied. GaN-based LED epitaxial wafers are irradiated under the simulation of space electron radiation by 1.5, 3.0, 4.5 MeV electron beam irradiation in the laboratory and photoluminescence (PL) spectra is applied to measure luminescent properties. The results show that LED luminous intensity increase about 25% when the radiation doses is 10 kGy with electron energy is 1.5 MeV, while reduced ~16% in dose irradiation in 100 kGy. Under 3 MeV electron beam irradiation, the color purity of LED increased, while in the higher energy irradiation the device failed.