红外与毫米波学报, 2012, 31 (4): 302, 网络出版: 2012-08-31
[110]晶向近本征硅单晶双光子吸收各向异性
Anisotropy of two-photon absorption in [110]-cut nearly-intrinsic silicon crystal
非线性光学 硅单晶 双光子吸收 三阶极化率 非线性各向异性 nonlinear optics silicon crystal two-photon absorption third-order susceptibility nonlinear anisotropy
摘要
以沿[110]晶向切割的近本征硅单晶为样品，通过研究样品对连续波固体激光器所产生的1.3 μm的近红外光的双光子吸收所诱导的光电流对入射光偏振方向的依赖关系，研究了双光子吸收的各向异性.测得了硅单晶对该波长的光的三阶极化率张量χ(3)的各向异性系数为-0.25，两个独立分量的比值χxxxx/χxxyy的幅度为2.4，并基于前期工作所得的χxxyy的结果，进而确定了另一分量χxxxx的值大约为1.49×10-19 m2/V2.
Abstract
The anisotropy of photocurrent induced by two-photon absorption in [110]-cut nearly-intrinsic crystal silicon sample is investigated. The anisotropy coefficient of third-order nonlinear susceptibility of Si at wavelength of 1.3 μm is measured to be -0.25, and the ratio of χxxxx to χxxyy is 2.4. The independent element χxxxx is consequently obtained to be about 1.49×10-19 m2/V2 based on the previously observed result of χxxyy.
刘秀环, 李明利, 陈占国, 贾刚, 时宝, 朱景程, 牟晋博, 李一. [110]晶向近本征硅单晶双光子吸收各向异性[J]. 红外与毫米波学报, 2012, 31(4): 302. LIU Xiu-Huan, LI Ming-Li, CHEN Zhan-Guo, JIA Gang, SHI Bao, ZHU Jing-Cheng, Mu Jin-Bo, LI Yi. Anisotropy of two-photon absorption in [110]-cut nearly-intrinsic silicon crystal[J]. Journal of Infrared and Millimeter Waves, 2012, 31(4): 302.
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