介绍了在制绒前使用双氧水 +低浓度碱液 +超声的预清洗工艺的新方法。与常规的预清洗工艺相比, 新的预清洗工艺避免了生产过程中的漂篮现象, 改善了硅片表面的清洁质量, 降低了表面微粗糙度。通过扫描电子显微镜(SEM)观察, 使用双氧水预清洗后的制绒绒面金字塔尺寸小而均匀, 反射率也有所降低。新预清洗工艺制绒后的硅片增加了对入射光的吸收, 有利于提高电池短路电流, 对提升电池光电转换效率有重要意义。

The new pre-cleaning process which uses hydrogen peroxide, low-concentration lye and ultrasonic before texturing is introduced. Compared with conventional pre-cleaning process, the new pre-cleaning process avoids the phenomenon of float-basket during production process, improves the cleanliness of the wafer surface and reduces the micro-roughness of the wafer surface. Observed through SEM after pre-cleaning, the texture surface size of the pyramid is small and uniform and the reflectivity also decreases. The monocrystal silicon wafer after new pre-cleaning texture process increases the absorption of incident light and helps to improve the short-circuit current and the conversion efficiency of cells.