本文研究具有掩蔽和选择性热氧化(MSTO）结构条形GaAs-Ga1-xAlxAsDH激光器的偏振特性,发现这类器件同时输出强度相近、相位无关的TE和TM模,不同于通常的半导体激光器主要是TE模输出的情况。本文从激光器有源区内应力分布和光弹性效应的观点,对此异常的偏振特性作出了定性解释。

We have studied the polarization characteristics of stripe geometry GaAs-Ga1-x AlxAs DH lasers with masked and selective thermal oxidation structure and found that the laser beams consist of both TE and TM modes with nearly the same intensities and are out of phase. The phenomena are quite different from the conventional semiconductor lasers in which the TE mode will be expected. A qualitative explanation for the above anomalous polarization charac-teristics is presented in view of the stresses and photoelastic effects in the active region.