半导体光电, 2012, 33 (4): 470, 网络出版: 2012-09-04
光MOS固体继电器抗电离辐射研究
Research on Antiionizing Radiation of the Photo MOSFET Relay
摘要
分析了光MOS固体继电器在电离辐照条件下的失效模式, 并针对组成器件的不同元器件提出了抗辐射的设计方案。采取了包括优化材料、合理设计器件结层厚度、选用抗辐射能力强的钝化膜等工艺技术制作样品, 并通过试验对比确认了抗辐射方案的有效性, 结果表明, 器件抗辐照能力大于30krad(Si), 能够满足对星用光MOS固体继电器抗辐射能力的要求。
Abstract
The failure modes of photo MOSFET relay under the effect of ionizing radiation were studied. Antiradiation designs for different components were proposed including material optimization, junction design and application of antiradiation dielectric films. Then photo MOSFETs samples were irradiated using a Co60 source and the antiradiation ability was improved to be higher than 30krad(si). The results indicated that the antiradiation designs for photo MOSFET are effective and can satisfy the requirement of antiradiation for photo MOSFETs.
李祖安, 郭艳春, 陈春霞, 龙平, 张佳宁, 徐道润, 张雷, 陈倩. 光MOS固体继电器抗电离辐射研究[J]. 半导体光电, 2012, 33(4): 470. LI Zu'an, GUO Yanchun, CHEN ChunXia, LONG Ping, ZHANG JiaNing, XU Daorun, ZHANG Lei, CHEN Qian. Research on Antiionizing Radiation of the Photo MOSFET Relay[J]. Semiconductor Optoelectronics, 2012, 33(4): 470.
PDF全文
