设计了一种简化的铝栅MOS半导体器件制作工艺流程, 用6张掩模版成功制作出了基于表面电场效应原理的生物检测硅芯片传感器, 采用SiO2Si3N4复合栅介质层及耗尽型器件结构, 以增强器件的识别与检测灵敏度。该传感器与常规铝栅MOS晶体管相比, 去除了介质层表面的栅极导电层, 代之以自组装技术制作生物薄膜并辅以栅参考电极作为控制栅极。用所制作的硅芯片传感器检测了相关生物蛋白质的电流响应, 给出了该电流响应与器件沟道长度和沟道电阻及生物蛋白浓度等参数的关系, 得到了较为满意的检测数据, 达到了预期的基于表面电场效应的硅传感器制作和生物检测的目的。

Based on surface fieldeffect, Si chip sensors for biological detection were made with simplified Al grid MOS process by employing only 6 pattern masks. For the sensors, complex SiO2Si3N4 gate dielectric film and depletion mode structure were used to enhance the recognition and detection sensitivity. Compared to conventional MOSFET, the sensors replace the grid conductive layer with selfassembled biological films and also use grid reference electrode as the control grid. The current response of relative biological proteins was tested with the fabricated Si chip sensors. The relationship of current response with the channel length, channel resistance and concentration of those biologicallike materials was given. The test results show that the expected gold of biological detection is reached.