半导体光电, 2012, 33 (4): 500, 网络出版: 2012-09-04
磁控溅射纳米VO2(B相)热敏薄膜的制备
Preparation and Characterization of Thermal Sensitive VO2(B Phase) Films by Magnetron Sputtering
二氧化钒薄膜 磁控溅射 微测辐射热计 非致冷红外探测器 电阻温度系数 VO2 (B) thin film magnetron sputtering microbolometer uncooled infrared detector TCR
摘要
利用磁控反应溅射镀膜方法在低温(250℃)条件下制备了主要成分为B相亚稳态二氧化钒(VO2)的薄膜材料。电学性能测试表明: 室温下该薄膜的方块电阻为50kΩ左右, 电阻温度系数为-2.4%/K, 可以作为非致冷红外微测热辐射热计的热敏材料。
Abstract
VO2(B) thin films were fabricated by magnetron sputtering under low temperature of 250℃. XRD test shows the thin films contain VO2 (B) mostly and some V2O5.The sheet resistance of the films was detected to be about 50kΩ under room temperature and the temperature coefficient of resistance (TCR) is near -0.024/, showing the films can be used as thermal sensitive material for uncooled IR microbolometers.
何少伟, 陈鹏杰, 胡庆, 董翔, 蒋亚东, 赖建军, 王宏臣, 黄光. 磁控溅射纳米VO2(B相)热敏薄膜的制备[J]. 半导体光电, 2012, 33(4): 500. HE Shaowei, CHEN Pengjie, HU Qing, DONG Xiang, JIANG Yadong, LAI Jianjun, WANG Hongchen, HUANG Guang. Preparation and Characterization of Thermal Sensitive VO2(B Phase) Films by Magnetron Sputtering[J]. Semiconductor Optoelectronics, 2012, 33(4): 500.