常规方法测试超薄膜的厚度存在很大困难。介绍一种测试约4nmPtSi厚度的电阻率法。先制备厚度约40nm的薄膜, 测试出薄膜电阻率, 再考虑超薄膜的表面效应、尺寸效应, 推导出超薄膜电阻率与薄膜电阻率的关系式, 测试超薄膜方电阻, 计算出超薄膜厚度。给出了TEM晶格像验证结果, 误差小于6%。实验表明该方法简单易行, 对其他超薄膜厚度的测试提供了参考。

It is very difficult to test the thickness of ultrathin films by conventional methods, so a method based on resistance test to determine the thickness of ~ 4nm PtSi ultrathin film is introduced. Firstly, the film with the thickness of ~ 40nm was prepared, and then its resistivity was tested. The relationship between the film resistivity and ultrathin film resistivity was deduced based on analyzing surface effect and size effect of ultrathin film. And the quartet resistivity and thickness were tested and calculated, respectively. Finally the results of TEM lattice image of the ultrathin sample were given with an error rate of less than 6%. It shows that the method is convenient and can be used to determine the thickness of other ultrathin film.