半导体光电, 2012, 33 (4): 540, 网络出版: 2012-09-04
不同偏压温度下非对称三势垒透射系数的模拟计算
Simulations on Asymmetric Threebarrier Transmission Coefficients under Different Bias and Temperatures
偏压 温度 非对称三势垒 透射系数 量子阱 bias temperature nonsymmetric threebarrier transmission coefficient quantum wells
摘要
非对称多势垒可获得比双势垒更大的共振隧穿电流及更良好的峰谷比。通过分析单电子对任意势垒透射的理论模型, 建立了任意非对称三势垒模型, 研究了不同偏压和温度对透射系数的影响, 并得出结论, 为进一步设计非对称量子器件提供理论指导。
Abstract
Asymmetric multibarrier can obtain larger resonant tunneling current and better peakvalley ratio than double barrier. By analyzing the theoretical models of singleelectron transmission on any barrier, an arbitrary asymmetric threebarrier model was established. Effects of different bias and temperatures on the transmission coefficient were studied. It provides a theoretical guidance for the further design of asymmetric quantum devices.
赵瑞娟, 安盼龙, 许丽萍, 杨艳. 不同偏压温度下非对称三势垒透射系数的模拟计算[J]. 半导体光电, 2012, 33(4): 540. ZHAO Ruijuan, AN Panlong, XU Liping, YANG Yan. Simulations on Asymmetric Threebarrier Transmission Coefficients under Different Bias and Temperatures[J]. Semiconductor Optoelectronics, 2012, 33(4): 540.