Frontiers of Optoelectronics, 2010, 3 (2): 125, 网络出版: 2012-09-20  

One-dimensional nanostructures for electronic and optoelectronic devices

One-dimensional nanostructures for electronic and optoelectronic devices
作者单位
Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
摘要
Abstract
One-dimensional (1-D) nanostructures have been the focus of current researches due to their unique physical properties and potential applications in nanoscale electronics and optoelectronics. They address and overcome the physical and economic limits of current microelectronic industry and will lead to reduced power consumption and largely increased device speed in next generation electronics and optoelectronics. This paper reviews the recent development on the device applications of 1-D nanostructures in electronics and optoelectronics. First, typical 1-D nanostructure forms, including nanorods, nanowires, nanotubes, nanobelts, and hetero-nanowires, synthesized from different methods are briefly discussed. Then, some nanoscale electronic and optoelectronic devices built on 1-D nanostructures are presented, including field-effect transistors (FETs), p-n diodes, ultraviolet (UV) detectors, light-emitting diodes (LEDs), nanolasers, integrated nanodevices, single nanowire solar cells, chemical sensors, biosensors, and nanogenerators. We then finalize the paper with some perspectives and outlook towards the fast-growing topics.

Guozhen SHEN, Di CHEN. One-dimensional nanostructures for electronic and optoelectronic devices[J]. Frontiers of Optoelectronics, 2010, 3(2): 125. Guozhen SHEN, Di CHEN. One-dimensional nanostructures for electronic and optoelectronic devices[J]. Frontiers of Optoelectronics, 2010, 3(2): 125.

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