量子点LED以胶体量子点为发光层, 通过调节作为发光层量子点的尺寸可以制作出覆盖可见(380-780nm)以及近红外光谱的量子点LED(QD-LED), 而且量子点LED器件发出的光谱范围很窄,其光谱半高宽可达30nm。简述了当今国内外关于QD-LED器件结构的研究成果以及器件的制作工艺, 介绍了目前课题组最新的一些相关成果。重点阐述了目前已经得到验证的几种量子点器件结构, 分析了其存在的优缺点, 这些结论对进一步改进QD-LED的结构以及使其可以更有利于商业化提供了参考。

Semiconductor nanocrystal quantum dots (QDs) acted as luminescent layer in organic light emitting device can be tuned across from visible to near-infrared spectrum by changing the size of QD, and device has a narrow bandwidth (full-width at half-maximum (FWHM) of the electroluminescence (EL) peak of ～30 nm).The research achievements of structures of quantum dot light-emitting diodes (QD-LED) and fabrication process of device achieved by the researchers in the field are summarized, and some new research results achieved in the subject are showed. Many structures of QD-LED which have been demonstrated are especially introduced. Merits and defects of structures of QD-LED mentioned above are analyzed, which may be more convenient to improve the structure of QD-LED and make it further commercial.