红外与毫米波学报, 2012, 31 (5): 407, 网络出版: 2012-10-18
掺砷碲镉汞的光致发光光谱和电学性质
Photoluminescence and electrical characteristics of arsenic-doped HgCdTe
摘要
碲镉汞的电学性能和光学性能直接决定探测器性能.对窄禁带掺砷碲镉汞进行了11～300 K的红外光致发光光谱和变温霍尔测量.对变温光致发光光谱进行了拟合分析，结果表明经通用的两步退火, 样品不仅存在砷占碲位(AsTe)、汞空位(VHg)和TeHg-VHg对，还存在碲反位(TeHg).掺杂浓度越大，退火产生的TeHg-VHg对越多.变温霍尔分析进一步证明通用的两步退火后材料中存在TeHg， TeHg留在材料中使迁移率减小.
Abstract
Electrical and optical properties of HgCdTe are crucial for detectors. Infrared photoluminescence (PL) spectra in the temperature range of 11-300K and Hall data were recorded on the arsenic-doped narrow-gap HgCdTe epilayers. Curve fittings of PL spectra indicate that AsTe、 VHg、 TeHg-VHg and TeHg exist in the arsenic-doped HgCdTe epilayers after the two-step annealing. More TeHg-VHg pairs are created when the dopant concentration is increased. Analysis of temperature-dependent Hall data verifies the existence of TeHg, which lowers the mobility of the material.
张小华, 陈路, 林铁, 何力, 郭少令, 褚君浩. 掺砷碲镉汞的光致发光光谱和电学性质[J]. 红外与毫米波学报, 2012, 31(5): 407. ZHANG Xiao-Hua, CHEN Lu, LIN Tie, HE Li, GUO Shao-Ling, CHU Jun-Hao. Photoluminescence and electrical characteristics of arsenic-doped HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2012, 31(5): 407.
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