激光与光电子学进展, 2012, 49 (11): 110001, 网络出版: 2012-10-18
超短脉冲增益开关半导体激光系统研究进展 下载: 744次
Research Progress on Ultrafast Gain-Switching Laser Diode System
激光器 增益开关 半导体激光器 注入锁定 脉冲压缩 脉冲功率放大 lasers gain switching semiconductor laser injection locking pulse compressing pulse power amplification
摘要
由增益开关半导体激光器和相应的注入锁定技术、脉冲压缩与整形技术、脉冲放大技术组成的激光系统可以产生高质量的皮秒级脉冲输出。近些年,相关技术领域新的研究进展使其产生的超短脉冲激光具有更高的输出功率、更窄的脉宽、更高的脉冲质量以及更灵活的可调谐性能,并因而得到更广泛的应用。对几方面技术最新的研究进展做了综述,总结了超短脉冲增益开关半导体激光系统的新应用,为其将来的研究提供参考。
Abstract
High quality picosecond laser pulse can be generated from gain-switching laser diode system, which is composed of gain-switching laser diode, injection locking technology, pulse compressing and reshaping technology, as well as pulse amplification technology. The recent research progress of gain-switching laser diode system prove that pulse with higher output power, narrower pulse width, higher pulse quality and more flexible tunability can be achieved with the system. As a result, ultrafast gain-switching laser diode system has been used in much more new fields. The research progress in the above technical aspects are reviewed, and the new applications of ultrafast gain-switching laser diode system are introduced briefly. This may offer a reference for the future research in this field.
陈河, 陈胜平, 侯静, 杨丽佳. 超短脉冲增益开关半导体激光系统研究进展[J]. 激光与光电子学进展, 2012, 49(11): 110001. Chen He, Chen Shengping, Hou Jing, Yang Lijia. Research Progress on Ultrafast Gain-Switching Laser Diode System[J]. Laser & Optoelectronics Progress, 2012, 49(11): 110001.