Frontiers of Optoelectronics, 2008, 1 (3): 258, 网络出版: 2012-11-06  

Temperature dependence of photoluminescence of QD arrays

Temperature dependence of photoluminescence of QD arrays
作者单位
1 The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Tianjin Key Laboratory of Photonics Materials and Technology for Information Science, TEDA Applied Physics School, Nankai University, Tianjin 300457, China
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
摘要
Abstract
It is essentially important to understand the temperature dependence of the photoluminescence of multimodal quantum dot (QD) arrays for the realization of efficient photonic devices. In this paper, the dynamics processes of different density multimodal QD arrays were fitted by using the rate equation model. It is shown that, in high density QD arrays, the intensity of photoluminescence of different QD families has different temperature dependence, and the intensity of photoluminescence is quenched as the temperature increases in low density QD arrays. In high density QD arrays, as the temperature increases, the carriers will be thermally excited into the wetting layer from QDs, and then some of them will be recaptured by the big scale QDs; carrier coupling takes place between the different QD families, while in low density QD arrays, the carrier transfer between different QD families will be limited. Temperature dependence of the maximum of the ratio of photoluminescence intensity of different QD families strongly depends on the difference of thermal activation energies.

Guoliang LIU, Jianghong YAO, Jingjun XU, Zhanguo WANG. Temperature dependence of photoluminescence of QD arrays[J]. Frontiers of Optoelectronics, 2008, 1(3): 258. Guoliang LIU, Jianghong YAO, Jingjun XU, Zhanguo WANG. Temperature dependence of photoluminescence of QD arrays[J]. Frontiers of Optoelectronics, 2008, 1(3): 258.

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