中国激光, 2013, 40 (1): 0106001, 网络出版: 2012-12-05  

预辅Al及AlN缓冲层厚度对GaN/Si(111)材料特性的影响

Effects of AlN Buffer Layer Thickness and Al Pre-Treatment on Properties of GaN/Si(111) Epilayer
作者单位
1 长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
2 中国科学院苏州纳米技术与纳米仿生研究所, 江苏 苏州 215123
摘要
主要研究了采用高温AlN缓冲层外延生长GaN/Si(111)材料的工艺技术。利用高分辨X射线双晶衍射(HRXRD)分析研究了GaN/Si(111)样品外延层的应变状态和晶体质量,通过原子力显微镜(AFM)分析研究了不同厚度的高温AlN缓冲层对GaN外延层的表面形貌的影响。实验结果表明,AlN缓冲层生长前预通三甲基铝(TMAl)的时间、AlN缓冲层的厚度对GaN外延层的应变状态、外延层的晶体质量以及表面形貌都有显著影响。得到最优的预辅Al时间为10 s,AlN缓冲层的厚度为40 nm。在此条件下外延生长的GaN样品(厚度约为1 μm)表面形貌较好,X射线衍射(XRD)双晶摇摆曲线半峰全宽(FWHM)(0002)面和(10-12)面分别为452″和722″。
Abstract
The technology of epitaxy growth GaN/Si (111) with high temperature AlN buffer is investigated. The state of strain and crystalline quality of GaN epitaxial layer on Si(111) substrate is investigated by high resolution X-ray double crystal diffraction (HRXRD). The influence of the high temperature AlN buffer thickness on the surface morphologies of GaN films is characterized by the atomic force microscopy (AFM). The experimental results show that the Al pre-treatment time and the thickness of AlN buffer have a significant influence on the crystalline quality, state of strain and surface morphology of GaN. The optimal Al pre-treatment time is 10 s, and the thickness of AlN buffer is 40 nm. The good surface morphology of GaN epitaxial layer is obtained with the full width at half maximum (FWHM) of GaN (0002) of 452″, and (10-12) of 722″ by X-ray (XRD) double crystal diffraction.

廉瑞凯, 李林, 范亚明, 王勇, 邓旭光, 张辉, 冯雷, 朱建军, 张宝顺. 预辅Al及AlN缓冲层厚度对GaN/Si(111)材料特性的影响[J]. 中国激光, 2013, 40(1): 0106001. Lian Ruikai, Li Lin, Fan Yaming, Wang Yong, Deng Xuguang, Zhang Hui, Feng Lei, Zhu Jianjun, Zhang Baoshun. Effects of AlN Buffer Layer Thickness and Al Pre-Treatment on Properties of GaN/Si(111) Epilayer[J]. Chinese Journal of Lasers, 2013, 40(1): 0106001.

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