为考察实际磁控溅射镀膜生产过程中由于靶材不断刻蚀消耗而造成的膜厚分布变化,文中就圆形磁控溅射靶建立了沉积模型,采用泰勒级数展开方式得到了薄膜分布的三阶近似解,并采用数值积分的方法计算出不同溅射角分布和靶基距时新靶和旧靶的相对厚度分布。计算结果表明溅射角分布的变化对膜厚分布影响较小,而靶基距变化影响较大;随着靶基距增加,旧靶材与新靶材的膜厚分布差距逐步减小。为验证计算结果,对新靶材和旧靶材进行了简单实验,实验结果与计算结果相符。

To investigate how film thickness distribution is changed when target etched continously in magnetron sputtering process, a deposition model is found for circular magnetron sputtering target, which is applied in manufacturing. Taylor series expansion is adopted to calculate a third order approximate solution for film thickness distribution. And numerical integration method is applied to calculate film distribution for both new and etched target with different angular distribution of sputtering and target-substrate distance. The calculate results show that sputtering angle has minor effect on film thickness distribution;oppositely, target-substrate distance has great impact on this. With the target substrate distance increases, the differences of film thickness distribution between new and etched target is reduced gradually. To verify this results, a experiment is carried out correspondly, which shows the same results to the calculating ones.