利用电子束沉积技术首次制备了氟化铒 (ErF3) 掺杂的氧化铟(In2O3)透明导电薄膜(IEFO), 研究了薄膜的晶体结构、光学特性和电学特性。利用原子力显微镜测试了不同厚度薄膜的形貌, 初步研究了薄膜的生长过程。研究发现: IEFO薄膜为多晶结构, Er原子的掺入改变了薄膜的优势生长方向, 使薄膜在(211)、(222)、(444)3个方向上的生长趋势基本相同。薄膜电阻率为1.265×10-3 Ω·cm, 电子迁移率为45.76 cm2·V-1·s-1, 电子浓度为1.197×1020 cm-3, 在380~780 nm范围内的可见光平均透过率为81%。

ErF3 doped indium oxide (IEFO) transparent conductive film was fabricated by electron beam evaporation. The optical, electrical characteristics and crystal structure of the IEFO film were studied. The IEFO film is polycrystalline structure, the introduction of Er changes the preferred orientation of lattice and makes the growth tendency of the (211), (222), (444) similar. The IEFO film shows a resistivity of 1.265×10-3 Ω·cm, a carrier mobility of 45.76 cm2·V-1·s-1, a carrier concentration of 1.197×1020 cm-3, and the optical transmittance of 81% at the range of 380～780 nm. The surface morphology of IEFO film in different thickness was tested by atomic force microscope and the growth process was discussed.